IKW25T120(2008) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW25T120
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKW25T120

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during t b

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=150°C

VCC=600V,IC=25A,

VGE=0/15V,

RG= 22Ω,

Lσ1)=180nH,

Cσ1)=39pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=150°C

VR=600V, IF=25A,

diF/dt=800A/µs

min.

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

50

32

660

130

3.0

4.0

7.0

320

5.2

29

320

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

- µC

-A

A/µs

1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors

5

Rev. 2.2 Sep 08

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