IKW25T120(2008) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW25T120
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKW25T120

td(off)

tf

100ns

td(on)

10ns

tr

1ns

0A

10A

20A

30A

40A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, RG=22Ω,

Dynamic test circuit in Figure E)

100 ns

10 ns

td(off)

tf

td(on)

tr

1 ns

5Ω

15Ω

25Ω

35Ω

45Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, IC=25A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=25A, RG=22Ω,

Dynamic test circuit in Figure E)

7V

6V

5V

max.

typ.

4V

min.

3V

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 1.0mA)

Power Semiconductors

8

Rev. 2.2 Sep 08

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