IKW25T120(2008) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW25T120
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKW25T120

14,0mJ

*) Eon and Etsinclude losses

due to diode recovery

12,0mJ

10,0mJ

8,0mJ

6,0mJ

Ets*

4,0mJ

Eoff

2,0mJ

Eon*

0,0mJ

10A

20A

30A

40A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, RG=22Ω,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

8 mJ

Ets*

6 mJ

4 mJ

2 mJ

Eoff

Eon*

0 mJ

5Ω

15Ω

25Ω

35Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, IC=25A,

Dynamic test circuit in Figure E)

7mJ

6mJ

*) Eon and Ets include losses

due to diode recovery

5mJ

4mJ

Ets*

3mJ

2mJ

Eoff

Eon*

1mJ

0mJ

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=25A, RG=22Ω,

Dynamic test circuit in Figure E)

10mJ

9mJ

*) Eon and Ets include losses

due to diode recovery

8mJ

7mJ

6mJ

5mJ

4mJ Ets*

3mJ

2mJ Eoff

1mJ Eon*

0mJ

400V

500V

600V

700V

800V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ=150°C,

VGE=0/15V, IC=25A, RG=22Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

9

Rev. 2.2 Sep 08

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