IKB03N120H2 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Lista de partido
IKB03N120H2
Infineon Technologies
IKB03N120H2 Datasheet PDF : 15 Pages
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IKP03N120H2,
IKW03N120H2
IKB03N120H2
16A
14A
12A
T =150°C
J
10A
T =25°C
J
8A
0Ohm
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE
Figure 25. Typical reverse recovery
current as a function of diode current
slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
4A
T =150°C
J
2A
T =25°C
J
-600A/us
-800A/us
-1000A/us
-1200A/us
-1400A/us
-1600A/us
-1800A/us
0Ohm
T =150°C
J
T =25°C
J
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE
Figure 26. Typical diode peak rate of fall
of reverse recovery current as a
function of diode current slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
3.0V
I =4A
F
2.5V
I =2A
F
I =1A
F
2.0V
1.5V
0A
0V
1V
2V
3V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current
as a function of forward voltage
1.0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward
voltage as a function of junction
temperature
Power Semiconductors
11
Rev. 2, Mar-04
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