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IKW15N120T2

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW15N120T2

TrenchStop® 2nd generation Series

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

Output capacitance

Coss

VGE=0V,

-

Reverse transfer capacitance

Crss

f=1MHz

-

Gate charge

QGate

VCC=960V, IC=40A

-

VGE=15V

Internal emitter inductance

LE

-

measured 5mm (0.197 in.) from case

Short circuit collector current1)

IC(SC)

VGE=15V,tSC≤10µs

-

VCC = 600V,

Tj,start = 25°C

Tj,start = 175°C

1000

100

56

93

13

82

60

- pF

-

-

- nC

- nH

-A

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during t b

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=25°C,

VCC=600V,IC=15A,

VGE=0/15V,

RG=41.8Ω,

Lσ2)=126nH,

Cσ2)=34pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=25°C,

VR=600V, IF=15A,

diF/dt=450A/µs

min.

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

32

25

362

95

1.25

0.8

2.05

300

1.3

10

215

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

µC

A

- A/µs

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors

3

Rev. 2.1 Sep 08

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