K15T120(2008) Ver la hoja de datos (PDF) - Infineon Technologies

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Lista de partido

K15T120
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKW15T120

600ns

500ns

400ns

300ns

200ns

TJ=150°C

100ns

0ns

200A/µs

400A/µs

600A/µs

TJ=25°C

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=600V, IF=15A,

Dynamic test circuit in Figure E)

TJ=150°C

3µC

2µC

TJ=25°C

1µC

0µC

200A/µs

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR=600V, IF=15A,

Dynamic test circuit in Figure E)

TJ=150°C

30A

25A

20A

TJ=25°C

15A

10A

5A

0A

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR=600V, IF=15A,

Dynamic test circuit in Figure E)

-300A/µs

-200A/µs

TJ=25°C

TJ=150°C

-100A/µs

-0A/µs

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=600V, IF=15A,

Dynamic test circuit in Figure E)

Power Semiconductors

11

Rev. 2.3 Sep 08

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