IRFF9120 Ver la hoja de datos (PDF) - Intersil

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IRFF9120

4A, 100V, 0.60 Ohm, P-Channel Power MOSFET

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IRFF9120

Typical Performance Curves (Continued)

OPERATION IN THIS REGION

IS LIMITED BY rDS(ON)

10

10µs

1ms

1

10ms

TC = 25oC

TJ = MAX RATED

SINGLE PULSE

0.1

1

10

VDS DRAIN VOLTAGE (V)

100ms

DC

100

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

10

-10V

-8

-9V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-8V

-6

VGS = -7V

-4

-6V

-2

-5V

-4V

0

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. OUTPUT CHARACTERISTICS

5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-10V

4

-8V

-9V

-7V

3

V = -6V

2

-5V

1

-4V

0

0

-1

-2

-3

-4

-5

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

-10

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDS ≥ ID(ON) x

-8 rDS(ON) MAXIMUM

TJ = 125oC

TJ = 25oC

-6

TJ = 55oC

-4

-2

0

-2

-4

-6

-8

-10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS

2.0

PULSE DURATION = 2µs

1.6

VGS = -10V

1.2

0.8

0.4

VGS = -20V

0

0

-5

-10

-15

-20

-25

ID, DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

2.2

VGS = -10V

ID = -2A

1.8

1.4

1.0

0.6

0.2

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4-97

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