ISL9K460P3(2013) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Lista de partido
ISL9K460P3 Datasheet PDF : 8 Pages
| |||
November 2013
ISL9K460P3
8 A, 600 V, STEALTHTM II Diode
Features
• Stealth Recovery trr = 17 ns (@ IF = 4 A)
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• SMPS FWD
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• Snubber Diode
Package
Description
The ISL9K460P3 is a STEALTH™ dual diode optimized
for low loss performance in high frequency hard switched
applications. The STEALTH™ family exhibits low reverse
recovery current (Irr) and exceptionally soft recovery
under typical operating conditions. This device is
intended for use as a free wheeling or boost diode in
power supplies and other power switching applications.
The low Irr and short ta phase reduce loss in switching
transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode
may be operated without the use of additional snubber
circuitry. Consider using the STEALTH™ diode with an
SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Symbol
JEDEC TO-220AB
K
CATHODE
(FLANGE)
ANODE 2
CATHODE
ANODE 1
A1
A2
Device Maximum Ratings (per leg) TC= 25°C unless otherwise noted
Symbol
Parameter
Rating
Unit
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 155°C)
Total Device Current (Both Legs)
600
V
600
V
600
V
4
A
8
A
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (0.5A, 80mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
8
A
50
A
58
W
10
mJ
-55 to 175
°C
300
°C
260
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
1
ISL9K460P3 Rev.C1
www.fairchildsemi.com
Share Link: 