IR21064S Ver la hoja de datos (PDF) - International Rectifier
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IR21064S Datasheet PDF : 10 Pages
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Preliminary Data Sheet No. PD60162J
IR2106/IR21064
IR2107/IR21074
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 5V Schmitt triggered input logic
• Matched propagation delay for both channels
• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs (IR2106/IR21064)
• Outputs out of phase with inputs (IR2107/IR21074)
Product Summary
VOFFSET
IO+/-
VOUT
ton/off (typ.)
600V max.
120 mA / 250 mA
10 - 20V
180 ns
Delay matching
50 ns
Description
The IR2106/IR21064/IR2107/IR21074 are high volt-
age, high speed power MOSFET and IGBT drivers
with independent high and low side referenced out-
put channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with stan-
dard CMOS or LSTTL output. The output drivers
feature a high pulse current buffer stage designed
for minimum driver cross-conduction. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration
which operates up to 600 volts.
Packages
8 Lead SOIC
8 Lead PDIP
14 Lead SOIC
14 Lead PDIP
Typical Connection
VCC
VCC
VB
HIN
HIN
HIN/HIN HO
LIN
LIN
LIN/LIN VS
COM
LO
IR2106/IR2107
up to 600V
TO
LOAD
HO
VCC
VCC
VB
HIN
HIN
HIN/HIN VS
LIN
LIN/LIN
LIN
VSS
VSS
COM
LO
up to 600V
IR21064/IR21074
TO
LOAD
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