IR2213 Ver la hoja de datos (PDF) - International Rectifier

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IR2213

HIGH AND LOW SIDE DRIVER

International Rectifier 

Preliminary Data Sheet No. PD60030 rev.P

IR2213(S) & (PbF)

HIGH AND LOW SIDE DRIVER

Features

• Floating channel designed for bootstrap operation

Fully operational to +1200V

Tolerant to negative transient voltage

dV/dt immune

• Gate drive supply range from 12 to 20V

• Undervoltage lockout for both channels

• 3.3V logic compatible

Separate logic supply range from 3.3V to 20V

Logic and power ground ±5V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs

• Also available LEAD-FREE (PbF)

Product Summary

VOFFSET

1200V max.

IO+/-

1.7A / 2A

VOUT

12 - 20V

ton/off (typ.) 280 & 225 ns

Delay Matching

30 ns

Packages

Description

The IR2213(S) is a high voltage, high speed power

MOSFET and IGBT driver with independent high and

low side referenced output channels. Proprietary

HVIC and latch immune CMOS technologies enable

16-Lead SOIC

ruggedized monolithic construction. Logic inputs are

compatible with standard CMOS or LSTTL outputs,

14-Lead PDIP

(wide body)

down to 3.3V logic. The output drivers feature a high

pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched

to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power

MOSFET or IGBT in the high side configuration which operates up to 1200 volts.

Typical Connection

up to 1200V

HO

VDD

VDD

VB

HIN

HIN

VS

SD

SD

LIN

LIN

VCC

VSS

VSS

COM

VCC

LO

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical

connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

TO

LOAD

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