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IRF1503SPBF

HEXFET® Power MOSFET

International Rectifier 

IRF1503S/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance …

Min. Typ. Max. Units

Conditions

30 ––– ––– V VGS = 0V, ID = 250µA

––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA

––– 2.6 3.3 mΩ VGS = 10V, ID = 140A „

2.0 ––– 4.0

75 ––– –––

––– ––– 20

––– ––– 250

V VDS = 10V, ID = 250µA

S VDS = 25V, ID = 140A

µA VDS = 30V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 150°C

––– ––– 200 nA VGS = 20V

––– ––– -200

VGS = -20V

––– 130 200

––– 36 54

––– 41 62

––– 17 –––

ID = 140A

nC VDS = 24V

VGS = 10V„

VDD = 15V

––– 130 ––– ns ID = 140A

––– 59 –––

RG = 2.5Ω

––– 48 –––

VGS = 10V „

––– 5.0 –––

Between lead,

D

6mm (0.25in.)

nH

from package

G

––– 13 –––

and center of die contact

S

––– 5730 –––

VGS = 0V

––– 2250 ––– pF VDS = 25V

––– 290 –––

ƒ = 1.0MHz, See Fig. 5

––– 7580 –––

––– 2290 –––

––– 3420 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 24V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 24V

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

ton

Notes:

Reverse RecoveryCharge

Forward Turn-On Time

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

‚ Starting TJ = 25°C, L = 0.049mH

RG = 25Ω, IAS = 140A. (See Figure 12).

ƒ ISD ≤ 140A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 190†

A

showing the

integral reverse

G

––– ––– 960

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 140A, VGS = 0V „

––– 71 110 ns TJ = 25°C, IF = 140A

––– 110 170 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

… Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

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