F1010NLPBF Ver la hoja de datos (PDF) - International Rectifier

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F1010NLPBF

HEXFET® Power MOSFET

International Rectifier 

IRF1010NS/LPbF

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

20µs PULSE WIDTH

TJ= 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20µs PULSE WIDTH

TJ= 175 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 25°C

TJ = 175°C

10

V DS= 25V

20µs PULSE WIDTH

1

4

6

8

10

12

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

2.5 ID = 85A

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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