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IRF3709ZS

HEXFET Power MOSFET

International Rectifier 

IRF3709Z/S/L

Static @ TJ = 25°C (unless otherwise specified)

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

30 ––– ––– V VGS = 0V, ID = 250µA

––– 0.021 ––– mV/°C Reference to 25°C, ID = 1mA

e ––– 5.0 6.3 mΩ VGS = 10V, ID = 21A

––– 6.2 7.8

e VGS = 4.5V, ID = 17A

1.35 ––– 2.25 V VDS = VGS, ID = 250µA

––– -5.5 ––– mV/°C

––– ––– 1.0 µA VDS = 24V, VGS = 0V

––– ––– 150

VDS = 24V, VGS = 0V, TJ = 125°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

88 ––– ––– S VDS = 15V, ID = 17A

––– 17 26

––– 4.4 –––

VDS = 15V

––– 1.7 ––– nC VGS = 4.5V

––– 6.0 –––

ID = 17A

––– 4.9 –––

See Fig. 14a&b

––– 7.7 –––

––– 11 ––– nC VDS = 16V, VGS = 0V

––– 13 –––

e VDD = 15V, VGS = 4.5V

––– 41 –––

ID = 17A

––– 16 ––– ns Clamped Inductive Load

––– 4.7 –––

––– 2130 –––

––– 450 –––

––– 220 –––

VGS = 0V

pF VDS = 15V

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

EAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

60

17

7.9

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

h Min. Typ. Max. Units

Conditions

––– ––– 87

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

A showing the

––– ––– 350

integral reverse

G

––– ––– 1.0

p-n junction diode.

S

e V TJ = 25°C, IS = 17A, VGS = 0V

––– 16

––– 6.2

24

9.3

e ns TJ = 25°C, IF = 17A, VDD = 15V

nC di/dt = 100A/µs

2

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