IRF3709Z Ver la hoja de datos (PDF) - International Rectifier

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IRF3709Z

HEXFET Power MOSFET

International Rectifier 

IRF3709Z/S/L

1000

TOP

BOTTOM

VGS

10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

3.0V

100

10

0.1

3.0V

≤60µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

TOP

BOTTOM

VGS

10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

3.0V

10

3.0V

1

0.1

≤60µs PULSE WIDTH

Tj = 175°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 175°C

10

1

TJ = 25°C

VDS = 15V

≤60µs PULSE WIDTH

0.1

012345678

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

2.0

ID = 42A

VGS = 10V

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

vs. Temperature

3

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