IRF3711ZCS Ver la hoja de datos (PDF) - International Rectifier

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IRF3711ZCS

HEXFET Power MOSFET

International Rectifier 

1000

100

VGS

TOP

10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

3.0V

10

1

0.1

60µs PULSE WIDTH

Tj = 25°C

1

10

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

IRF3711ZC/S/L

1000

100

VGS

TOP

10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

10

3.0V

1

0.1

60µs PULSE WIDTH

Tj = 175°C

1

10

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 25°C

TJ = 175°C

2.0

ID = 30A

VGS = 10V

1.5

10

1

2.0

VDS = 10V

60µs PULSE WIDTH

3.0 4.0 5.0 6.0 7.0 8.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

vs. Temperature

3

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