IRF3711ZS Ver la hoja de datos (PDF) - International Rectifier

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IRF3711ZS

HEXFET Power MOSFET

International Rectifier 

IRF3711Z/S/L

100

LIMITED BY PACKAGE

80

60

40

20

0

25

50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

2.4

2.0

1.6

ID = 250µA

1.2

0.8

0.4

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

10

1 D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

0.01

0.001

1E-006

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci= τi/Ri

R2R2

τ2 τ2

1E-005

0.0001

0.001

t1 , Rectangular Pulse Duration (sec)

R3R3 Ri (°C/W) τi (sec)

τCτ 0.894 0.000306

τ3 τ3

0.600 0.001019

0.401 0.006662

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

0.1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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