IRF4905STRRPBF Ver la hoja de datos (PDF) - International Rectifier
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IRF4905STRRPBF Datasheet PDF : 10 Pages
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IRF4905S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55 ––– ––– V VGS = 0V, ID = -250µA
––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.02 Ω VGS = -10V, ID = -38A
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
21 ––– ––– S VDS = -25V, ID = -38A
––– ––– -25 µA VDS = -55V, VGS = 0V
––– ––– -250
VDS = -44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 180
ID = -38A
––– ––– 32
––– ––– 86
nC VDS = -44V
VGS = -10V, See Fig. 6 and 13
––– 18 –––
VDD = -28V
––– 99 ––– ns ID = -38A
––– 61 –––
RG = 2.5Ω
––– 96 –––
RD = 0.72Ω, See Fig. 10
Between lead,
––– 7.5 ––– nH and center of die contact
––– 3400 –––
VGS = 0V
––– 1400 ––– pF VDS = -25V
––– 640 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
I SM
Pulsed Source Current
(Body Diode)
V SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -74
A showing the
integral reverse
G
––– ––– -260
p-n junction diode.
S
––– ––– -1.6 V TJ = 25°C, IS = -38A, VGS = 0V
––– 89 130 ns TJ = 25°C, IF = -38A
––– 230 350 nC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 1.3mH
RG = 25Ω, IAS = -38A. (See Figure 12)
Uses IRF4905 data and test conditions
ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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