IRF5802 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF5802 Datasheet PDF : 8 Pages
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SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
PD- 94086
IRF5802
HEXFET® Power MOSFET
RDS(on) max
1.2Ω@VGS = 10V
ID
0.9A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
D1
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See D 2
App. Note AN1001)
l Fully Characterized Avalanche Voltage G 3
and Current
6D
5D
4S
TSOP-6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.9
0.7
7.0
2.0
0.02
± 30
7.1
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Notes through are on page 8
www.irf.com
Max.
62.5
Units
°C/W
1
1/23/01
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