IRF4905L Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.

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Lista de partido

IRF4905L

HEXFET® Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

Kersemi Electronic Co., Ltd. 

IRF4905S/L

7000

6000

VGS = 0V,

f = 1MHz

C is s = C gs + C gd , Cds SH O RTE D

Crss = C gd

Co ss = Cds + C g d

5000

C is s

4000

3000

C oss

2000

1000

C rs s

0

A

1

10

100

-VD S , Drain-to-Source V oltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

I D = -38A

16

12

VDS = -44V

VDS = -28V

8

4

FOR TE ST CIRCUIT

SE E FIGURE 13

0

A

0

40

80

120

160

200

Q G , Total G ate C harge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

TJ = 175°C

10

TJ = 25°C

1

VGS = 0V A

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-VSD , S ource-to-Drain V oltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

1000

OPE R ATIO N IN TH IS A RE A LIMITE D

BY R D S(o n)

100

100µ s

1m s

10

10m s

TC = 25°C

TJ = 175°C

Sin gle Pu lse

1

1

10

A

100

-VDS , Drain-to-Source V oltage (V )

Fig 8. Maximum Safe Operating Area

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