RF1S640SM(2002) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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RF1S640SM Datasheet PDF : 7 Pages
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IRF640, RF1S640, RF1S640SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1000
OPERATION IN THIS AREA MAY BE
LIMITED BY rDS(ON)
100
TC = 25oC
10µs
100µs
10
1ms
10ms
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
1
1
10
DC
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
30
10V
24
8V
18
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
7V
12
6
0
0
6V
5V
4V
12
24
36
48
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
24
VGS = 8V
VGS = 10V
VGS = 7V
18
12
VGS = 6V
6
VGS = 4V
VGS = 5V
0
0
1.0
2.0
3.0
4.0
5.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
1.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.2
0.9
0.6
0.3
0
0
VGS= 10V
VGS = 20V
15
30
45
60
75
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
10
150oC
1
25oC
0.1
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 18A
2.4
1.8
1.2
0.6
0
-60 -40
-20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
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