IRF7210 Ver la hoja de datos (PDF) - International Rectifier
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Lista de partido
IRF7210 Datasheet PDF : 7 Pages
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PD- 91844B
IRF7210
l Ultra Low On-Resistance
l P-Channel MOSFET
S
l Surface Mount
S
l Available in Tape & Reel
S
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
HEXFET® Power MOSFET
A
1
8
D
2
7
D
VDSS = -12V
3
6
D
4
5 D RDS(on) = 0.007Ω
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
-12
±16
±12
±100
2.5
1.6
0.02
± 12
16
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V
V
°C
Units
°C/W
1
10/19/04
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