IRF7607 Ver la hoja de datos (PDF) - International Rectifier

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IRF7607

HEXFET® Power MOSFET

International Rectifier 

100

VGS

TOP 7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

2.00V

BOTTOM 1.50V

10

PROVISIONAL

100

VGS

TOP 7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

2.00V

BOTTOM 1.50V

10

IRF7607

1.50V

20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1.50V

20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 25° C

TJ = 150° C

10

V DS= 15V

20µs PULSE WIDTH

1

1.5

2.0

2.5

3.0

3.5

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0 ID = 5.3A

1.5

1.0

0.5

VGS = 4.5V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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