IRF7756 Ver la hoja de datos (PDF) - International Rectifier

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IRF7756

Power MOSFET(Vdss=-20V)

International Rectifier 

100

10

VGS

TOP -7.5V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

-1.0V

BOTTOM -0.8V

1

0.1

-0.8V

0.01

0.1

20µs PULSE WIDTH

TJ = 25 °C

1

10

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

10

VGS

TOP -7.5V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

-1.0V

BOTTOM -0.8V

IRF7756

1

-0.8V

0.1

0.1

20µs PULSE WIDTH

TJ = 150 °C

1

10

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

10

TJ = 150°C

1

0

0.5

TJ = 25°C

VDS = -10V

20µs PULSE WIDTH

1.0

1.5

2.0

-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0 ID = -4.3A

1.5

1.0

0.5

VGS = -4.5V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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