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IRF7807ZTR

HEXFET Power MOSFET

International Rectifier 

IRF7807Z

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)

IDSS

IGSS

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

RG

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

30

–––

–––

–––

1.35

–––

–––

0.023

11

14.5

1.8

- 4.7

–––

–––

13.8

18.2

2.25

–––

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 11A

e VGS = 4.5V, ID = 8.8A

V VDS = VGS, ID = 250µA

mV/°C

––– ––– 1.0 µA VDS = 24V, VGS = 0V

––– ––– 150

VDS = 24V, VGS = 0V, TJ = 125°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

22 ––– ––– S VDS = 15V, ID = 8.8A

––– 7.2 11

––– 2.1 –––

VDS = 15V

––– 0.7 ––– nC VGS = 4.5V

––– 2.7 –––

ID = 8.8A

––– 1.7 –––

See Fig. 16

––– 3.4 –––

––– 2.8 ––– nC VDS = 15V, VGS = 0V

––– 2.5 4.8

––– 6.9 –––

Ω

e VDD = 15V, VGS = 4.5V

––– 6.2 –––

ID = 8.8A

––– 10 ––– ns Clamped Inductive Load

––– 3.1 –––

––– 770 –––

––– 190 –––

––– 100 –––

VGS = 0V

pF VDS = 15V

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

d Single Pulse Avalanche Energy

IAR

™ Avalanche Current

Typ.

–––

–––

Max.

63

8.8

Units

mJ

A

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

––– ––– 3.1

MOSFET symbol

(Body Diode)

A showing the

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

––– ––– 88

integral reverse

––– ––– 1.0

p-n junction diode.

e V TJ = 25°C, IS = 8.8A, VGS = 0V

––– 31 46 ns TJ = 25°C, IF = 8.8A, VDD = 15V

e ––– 17 26 nC di/dt = 100A/µs

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