IRF7311TR Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRF7311TR

HEXFET® Power MOSFET

International Rectifier 

IRF7311

1600

1200

C iss

V GS = 0V,

f = 1MHz

C iss = Cgs + C gd , Cds SH OR TE D

C rss = C gd

C oss = C ds + C gd

C oss

800

Crss

400

0

A

1

10

100

V DS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

10

ID = 6.0A

8

VDS = 10V

6

4

2

0

0

5

10

15

20

25

30

QG, Total Gate Charge (nC)

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

0.50

0.20

10

0.10

0.05

0.02

1 0.01

PDM

t1

t2

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.00001

0.0001

0.001

0.01

Notes:

1. Duty factor D = t1 / t 2

2. Peak TJ = P DM x ZthJA + TA

0.1

1

10

100

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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