IRF7324D1 Ver la hoja de datos (PDF) - International Rectifier
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IRF7324D1 Datasheet PDF : 8 Pages
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IRF7324D1
Power Mosfet Characteristics
1500
1000
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SH O R TE D
C rss = C gd
C oss = Cds + C gd
C is s
C oss
10
I D = -2.2A
VDS = -16V
8
6
C rss
500
0
A
1
10
100
-VDS , Drain-to-Source Voltage (V)
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.1
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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