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IRF7463PBF

SMPS MOSFET

International Rectifier 

IRF7463PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

30

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

–––

RDS(on)

Static Drain-to-Source On-Resistance –––

–––

VGS(th)

Gate Threshold Voltage

0.6

–––

IDSS

Drain-to-Source Leakage Current

–––

Gate-to-Source Forward Leakage

–––

IGSS

Gate-to-Source Reverse Leakage

–––

–––

0.029

6.0

7.0

10.5

–––

–––

–––

–––

–––

–––

–––

8.0

9.5

20

2.0

20

100

200

-200

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

mΩ

VGS = 10V, ID = 14A ƒ

VGS = 4.5V, ID = 11A ƒ

VGS = 2.7V, ID = 7.0A ƒ

V VDS = VGS, ID = 250µA

µA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

nA VGS = 12V

VGS = -12V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

41 ––– ––– S VDS = 24V, ID = 11A

––– 34 51

ID = 11A

––– 7.6 11.4 nC VDS = 15V

––– 12 18

VGS = 4.5V ƒ

––– 21 32

VGS = 0V, VDS = 15V

––– 16 –––

VDD = 15V

––– 138 ––– ns ID = 11A

––– 28 –––

RG = 1.8Ω

––– 6.5 –––

VGS = 4.5V ƒ

––– 3150 –––

VGS = 0V

––– 1070 –––

VDS = 15V

––– 180 ––– pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Typ.

–––

–––

Max.

320

14

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

–––

0.52

0.44

45

65

50

80

Max.

2.3

110

1.3

–––

70

100

75

120

Units

A

V

ns

nC

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 11A, VGS = 0V ƒ

TJ = 125°C, IS = 11A, VGS = 0V ƒ

TJ = 25°C, IF = 11A, VR=15V

di/dt = 100A/µs ƒ

TJ = 125°C, IF = 11A, VR=15V

di/dt = 100A/µs ƒ

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