IRF7701GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
-12 ––– –––
––– -0.006 –––
––– ––– 0.011
––– 0.015
––– 0.022
-0.45 ––– -1.2
V
V/°C
Ω
V
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -10A
VGS = -2.5V, ID = -8.5A
VGS = -1.8V, ID = -7.0A
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
21 ––– ––– S VDS = -10V, ID = -10A
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– -25
µA
VDS = -12V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
––– ––– 100
nA
VGS = -8.0V
VGS = 8.0V
Qg
Total Gate Charge
––– 69 100
ID = -8.0A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
––– 9.1 14
––– 21 32
nC VDS = -9.6V
VGS = -4.5V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 19 ––– ns VDD = -6.0V
––– 20 –––
ID = -1.0A
––– 240 –––
RD = 6.0Ω
––– 220 –––
VGS = -4.5V
Ciss
Input Capacitance
––– 5050 –––
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 1520 ––– pF VDS = -10V
––– 1120 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
–––
–––
–––
Typ.
–––
52
53
Max.
-1.5
-80
-1.2
78
80
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.5A, VGS = 0V
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
2
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