IRF9Z24N Ver la hoja de datos (PDF) - International Rectifier

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IRF9Z24N

HEXFET® Power MOSFET

International Rectifier 

IRF9Z24N

12

9

6

3

0

A

25

50

75

100

125

150

175

TC , C ase T emperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

VDS

VGS

RG

RD

D.U.T.

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

-

+ VDD

Fig 10a. Switching Time Test Circuit

VGS

10%

td(on) tr

td(off) tf

90%

VDS

Fig 10b. Switching Time Waveforms

D = 0 .5 0

1

0 .2 0

0 .1 0

0 .0 5

0 .0 2

0 .0 1

0.1

S IN G LE P U L S E

(T H ER M AL R ES PON S E)

PDM

t1

t2

Notes:

1. D uty factor D = t1 / t 2

0.01

0.00001

0.0001

0.001

2. P ea k TJ = P DM x Z th JC + TC

A

0.01

0.1

1

t1 , Rectan gular Pulse Duratio n (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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