IRFB4228PBF Ver la hoja de datos (PDF) - International Rectifier

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Lista de partido

IRFB4228PBF

PDP SWITCH

International Rectifier 

IRFB4228PbF

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

+

‚

-



RG

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

D.U.T. ISD Waveform

Reverse

-„ +

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

*

• dv/dt controlled by RG

• Driver same type as D.U.T.

VDD

Re-Applied

** + Voltage

Body Diode Forward Drop

• ISD controlled by Duty Factor "D"

-

Inductor Curent

• D.U.T. - Device Under Test

Ripple ≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** VGS = 5V for Logic Level Devices

V*G*S*=10V

VDD

ISD

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

15V

VDS

L

DRIVER

RG

2V0GVS

tp

D.U.T

IAS

0.01Ω

+

- VDD

A

Fig 19a. Unclamped Inductive Test Circuit

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

-VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 20a. Gate Charge Test Circuit

V(BR)DSS

tp

IAS

Fig 19b. Unclamped Inductive Waveforms

Id

Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd

Qgodr

Fig 20b. Gate Charge Waveform

6

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