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IRFD110PBF

HEXFET® Power MOSFET

International Rectifier 

IRFD110PbF

Peak Diode Recovery dv/dt Test Circuit

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Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

+

-

-

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• dv/dt controlled by RG

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• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

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* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

VGS=10V

D.U.T. ISD Waveform

Reverse

Recovery

Body Diode Forward

Current

Current

di/dt

D.U.T. VDS Waveform

Diode Recovery

dv/dt

VDD

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ≤ 5%

ISD

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig -14 For N Channel HEXFETS

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