IRFBC40LC Ver la hoja de datos (PDF) - Vishay Semiconductors

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Lista de partido

IRFBC40LC

Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)

Vishay Semiconductors 

IRFBC40LC, SiHFBC40LC

Vishay Siliconix

2400

2000

1600

1200

800

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

400

Crss

0

100

101

91114_05

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

101 150 °C

25 °C

VGS = 0 V

100

0.6

0.8

1.0

1.2

1.4

91114_07

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = 5.2 A

16

VDS = 300 V

VDS = 240 V

12

VDS = 180 V

8

4

For test circuit

0

see figure 13

0

8

16

24

32

40

91114_06

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

103

5

2

102

5

2

10

5

2

1

5

2

0.1

5

2

10-2

0.1 2

Operation in this area limited

by RDS(on)

10 µs

100 µs

1 ms

10 ms

51 2

TC = 25 °C

TJ = 150 °C

Single Pulse

5 10 2 5 102 2

5 103 2

5 104

91114_08

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91114

S-81567-Rev. A, 28-Jul-08

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