IRFBC40S Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFBC40S Datasheet PDF : 8 Pages
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IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
6.2
A
-
-
25
Body Diode Voltage
VSD
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
trr
-
450
940
ns
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb
Qrr
-
3.8
7.9
µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRFBC40/SiHFBC40 data and test conditions.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
www.vishay.com
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