IRFD110 Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFD110 Datasheet PDF : 9 Pages
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IRFD110, SiHFD110
Vishay Siliconix
400
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
320
Crss = Cgd
Coss = Cds + Cgd
240
Ciss
160
Coss
80
0
100
91127_05
Crss
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
175 °C
100
25 °C
10-1
0.5
91127_07
VGS = 0 V
0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 5.6 A
16
VDS = 80 V
VDS = 50 V
VDS = 20 V
12
8
4
0
0
91127_06
For test circuit
see figure 13
2
4
6
8
10
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
Operation in this area limited
5
by RDS(on)
2
10
10 µs
5
100 µs
2
1
5
2
0.1 2
0.1
1 ms
10 ms
TA = 25 °C
TJ = 175 °C
Single Pulse
5
2
1
5
2
10
5
2
102
5
103
91127_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
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