IRFD110PBF Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Lista de partido
IRFD110PBF Datasheet PDF : 9 Pages
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IRFD110, SiHFD110
Vishay Siliconix
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T.
IAS
0.01 W
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
350
ID
300
Top 0.82 A
1.4 A
Bottom 2.0 A
250
200
150
100
50
VDD = 25 V
0
25
50
75
100 125 150 175
91127_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
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