IRFD9010PBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFD9010PBF Datasheet PDF : 7 Pages
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IRFD9010, SiHFD9010
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 50 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V VDS > ID(on) x RDS(on) max.
VGS = - 10 V
ID = - 0.58 Ab
VDS = - 20 V, ID = - 2.4 A
- 50
-
- 2.0
-
-
-
- 1.1
-
1.7
-
-
- 0.091 -
-
- 4.0
-
± 500
-
- 250
- - 1000
-
-
0.35 0.50
2.5
-
V
V/°C
V
nA
μA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
-
VDS = - 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = - 10 V
ID = - 4.7 A, VDS = 0.8 V
see fig. 6 and 13b
-
-
-
VDD = - 25 V, ID = - 4.7 A
-
Rg = 24 Ω, RD = 5.6 Ω,
see fig. 10b
-
-
240
-
160
-
pF
30
-
7.2
11
2.5
3.8
nC
2.7
4.1
6.1
9.2
47
71
ns
13
20
39
59
Internal Drain Inductance
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
4.0
-
nH
-
6.0
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 1.1
A
-
-
- 8.8
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 0.7 A, VGS = 0 Vb
-
-
- 5.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
33
75
160
ns
TJ = 25 °C, IF = - 4.7 A, dI/dt = 100 A/μsb 0.090 0.22
0.52
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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Document Number: 91405
S10-0998-Rev. A, 26-Apr-10
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