IRFD9010PBF Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

fabricante

IRFD9010PBF

Power MOSFET

Vishay Semiconductors 

IRFD9010, SiHFD9010

Vishay Siliconix

1000

100 0.5

0.2

0.1

10 0.05

0.02

1 0.01

0.1

0.00001

PDM

Single Pulse

(Thermal Response)

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Peak TJ = PDM x TthJC + TC

0.0001

0.001

0.01

0.1

1

10

100

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Vary tp to obtain

required IAS

Rg

- 10 V

tp

L

D.U.T

IAS

0.01 W

-

+

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

- 10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

-

D.U.T. + VDS

VGS

- 3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

Document Number: 91405

S10-0998-Rev. A, 26-Apr-10

www.vishay.com

5

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