IRFD9020 Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFD9020 Datasheet PDF : 8 Pages
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IRFD9020, SiHFD9020
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 1 µA
VGS = ± 20
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 0.96 Ab
VDS = - 25 V, ID = - 0.96 Ab
- 60
-
- 2.0
-
-
-
-
1.3
-
- 0.056
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.28
-
V
V/°C
V
nA
µA
Ω
S
Input Capacitance
Ciss
VGS = 0 V
-
570
-
Output Capacitance
Coss
VDS = - 25 V
-
360
-
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
65
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
19
ID = - 11 A, VDS = - 48 V,
Qgs
VGS = - 10 V
see fig. 6 and 13b
-
-
5.4
nC
Qgd
-
-
11
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
-
13
-
VDD = - 30 V, ID = - 11 A
-
68
-
ns
RG = 18 Ω, RD = 2.5 Ω, see fig. 10b
-
15
-
-
29
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.0
-
nH
-
6.0
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 1.6
A
-
-
- 13
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 1.6 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 11A, di/dt = 100 A/µsb
100
200
ns
Qrr
-
0.32 0.64 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 90170
S-81412-Rev. A, 07-Jul-08
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