IRFL024NPBF Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRFL024NPBF

HEXFET® Power MOSFET

International Rectifier 

6

5

4

3

2

1

0

25

50

75

100 125 150

TA ,Ambient Temperature (°C)

Fig 9. Maximum Drain Current vs.

Ambient Temperature

IRFL024ZPbF

2.0

ID = 3.1A

VGS = 10V

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

100

D = 0.50

10

0.20

0.10

0.05

1

0.02

0.01

0.1

0.01

1E-006

SINGLE PULSE

( THERMAL RESPONSE )

1E-005

0.0001

0.001

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

R3R3 Ri (°C/W) τi (sec)

τCτ 5.0477 0.000463

τ3 τ3

19.9479 0.636160

20.0169 21.10000

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

0.1

1

10

100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com

5

Share Link: