IRFL214TR Ver la hoja de datos (PDF) - Vishay Semiconductors

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IRFL214TR

Power MOSFET

Vishay Semiconductors 

IRFL214, SiHFL214

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

Pulsed Diode Forward Currenta

integral reverse

ISM

p - n junction diode

D

G

S

-

-

0.79

A

-

-

6.3

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

VSD

TJ = 25 °C, IS = 0.79 A, VGS = 0 Vb

-

-

2.0

V

trr

-

190

390

ns

TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/µsb

Qrr

-

0.64 1.3

µC

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

Document Number: 91194

S-81393-Rev. A, 07-Jul-08

Fig. 4 - Normalized On-Resistance vs. Temperature

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