IRFU214(2013) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFU214 Datasheet PDF : 12 Pages
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www.vishay.com
IRFR214, IRFU214, SiHFR214, SiHFU214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
2.0
8.2
1.8
4.5
Single
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR214, SiHFR214)
• Straight Lead (IRFU214, SiHFU214)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DPAK
(TO-252)
IPAK
(TO-251)
D
D
G
GS
GD S
S
N-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR214-GE3
IRFR214PbF
SiHFR214-E3
DPAK (TO-252)
SiHFR214TRL-GE3
IRFR214TRLPbFa
SiHFR214TL-E3a
DPAK (TO-252)
SiHFR214TR-GE3
IRFR214TRPbFa
SiHFR214T-E3a
DPAK (TO-252)
SiHFR214TRR-GE3
-
-
IPAK (TO-251)
SiHFU214-GE3
IRFU214PbF
SiHFU214-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, Starting TJ = 25 °C, L = 62 mH, Rg = 25 , IAS = 2.2 A (see fig. 12).
c. ISD 2.2 A, dI/dt 65 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 Material).
LIMIT
250
± 20
2.2
1.4
8.8
0.20
0.020
190
2.2
2.5
25
2.5
4.8
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
W
V/ns
°C
S13-0171-Rev. E, 04-Feb-13
1
Document Number: 91269
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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