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IRFR3704Z

HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC

International Rectifier 

IRFR/U3704Z

Static @ TJ = 25°C (unless otherwise specified)

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

20

–––

–––

–––

1.65

–––

–––

0.015

6.7

9.2

2.1

-5.5

–––

–––

8.4

11.4

2.55

–––

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 15A

e VGS = 4.5V, ID = 12A

V VDS = VGS, ID = 250µA

mV/°C

––– ––– 1.0 µA VDS =16V, VGS = 0V

––– ––– 150

VDS = 16V, VGS = 0V, TJ = 125°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

41 ––– ––– S VDS = 10V, ID = 12A

––– 9.3 14

––– 3.0 –––

VDS = 10V

––– 1.1 ––– nC VGS = 4.5V

––– 2.7 –––

ID = 12A

––– 2.5 –––

See Fig. 16

––– 3.8 –––

––– 5.6 ––– nC VDS = 10V, VGS = 0V

––– 41 –––

e VDD = 10V, VGS = 4.5V

––– 8.9 –––

ID = 12A

––– 4.9 ––– ns Clamped Inductive Load

––– 12 –––

––– 1190 –––

––– 380 –––

––– 170 –––

VGS = 0V

pF VDS = 10V

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

EAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

41

12

4.8

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

2

Min. Typ. Max. Units

Conditions

f ––– ––– 60

MOSFET symbol

D

A showing the

––– ––– 240

integral reverse

G

––– ––– 1.0

––– 13 19

––– 4.2 6.3

p-n junction diode.

S

e V TJ = 25°C, IS = 12A, VGS = 0V

e ns TJ = 25°C, IF = 12A, VDD = 10V

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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