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IRFU3707Z

HEXFET Power MOSFET

International Rectifier 

IRFR/U3707Z

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

30

–––

–––

–––

1.35

–––

–––

0.023

7.5

10

1.80

-5.0

–––

–––

9.5

12.5

2.25

–––

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 15A

e VGS = 4.5V, ID = 12A

V VDS = VGS, ID = 250µA

mV/°C

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0 µA VDS = 24V, VGS = 0V

––– ––– 150

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

71 ––– –––

––– 9.6 14

––– 2.6 –––

––– 0.90 –––

––– 3.5 –––

––– 2.6 –––

S VDS = 15V, ID = 12A

VDS = 15V

nC VGS = 4.5V

ID = 12A

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 4.4 –––

Qoss

td(on)

tr

td(off)

tf

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

––– 5.8 ––– nC VDS = 15V, VGS = 0V

––– 8.0 –––

e VDD = 16V, VGS = 4.5V

––– 11 –––

ID = 12A

––– 12 ––– ns Clamped Inductive Load

––– 3.3 –––

Ciss

Input Capacitance

––– 1150 –––

VGS = 0V

Coss

Output Capacitance

––– 260 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 120 –––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

EAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

42

12

5.0

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

2

f Min. Typ. Max. Units

Conditions

––– ––– 56

MOSFET symbol

D

A showing the

––– ––– 220

integral reverse

G

––– ––– 1.0

––– 25 38

––– 17 26

p-n junction diode.

S

e V TJ = 25°C, IS = 12A, VGS = 0V

e ns TJ = 25°C, IF = 12A, VDD = 15V

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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