IRFU3707ZPBF Ver la hoja de datos (PDF) - International Rectifier

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IRFU3707ZPBF

HEXFET® Power MOSFET

International Rectifier 

IRFR/U3707ZPbF

60

50

Limited By Package

40

30

20

10

0

25

50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

2.5

2.0

ID = 250µA

1.5

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

10

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

0.01

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci= τi/Ri

R2R2

τ2 τ2

R3R3 Ri (°C/W) τi (sec)

τCτ 0.823 0.000128

τ3 τ3

1.698 0.000845

0.481 0.016503

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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