IRFR420A(2016) Ver la hoja de datos (PDF) - Vishay Semiconductors

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IRFR420A
(Rev.:2016)

Power MOSFET

Vishay Semiconductors 

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A

www.vishay.com

Vishay Siliconix

300

ID

TOP

1.1 A

250

1.6 A

BOTTOM 2.5 A

200

150

100

50

0

25

50

75

100

125

150

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

700

650

600

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

550

0.0

0.5

1.0

1.5

2.0

2.5

IAV , Avalanche Current ( A)

Fig. 12d - Maximum Avalanche Energy vs. Drain Current

S16-1522-Rev. D, 08-Aug-16

6

Document Number: 91274

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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