IRFS450 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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Lista de partido
IRFS450 Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
V = 10V
1.2
GS
0.9
VGS = 20V
0.6
0.3
※ Note : TJ = 25℃
0.0
0
10
20
30
40
50
60
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
6000
5000
4000
3000
2000
1000
Ciss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100
25oC
10-1
2
-55oC
※ Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1.
2.
V25G0S μ=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 100V
V = 250V
DS
8
VDS = 400V
6
4
2
※ Note : ID = 14 A
0
0 10 20 30 40 50 60 70 80 90 100
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001
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