IRFSL4410 Ver la hoja de datos (PDF) - International Rectifier
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IRFSL4410 Datasheet PDF : 11 Pages
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IRFB4410/IRFS4410/IRFSL4410
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Gate Input Resistance
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.094 ––– V/°C Reference to 25°C, ID = 1mAd
––– 8.0 10 mΩ VGS = 10V, ID = 58A g
2.0 ––– 4.0 V VDS = VGS, ID = 150µA
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 1.5 ––– Ω f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
120 ––– –––
Qg
Total Gate Charge
––– 120 180
Qgs
Gate-to-Source Charge
––– 31 –––
Qgd
Gate-to-Drain ("Miller") Charge
––– 44 –––
td(on)
Turn-On Delay Time
––– 24 –––
tr
Rise Time
––– 80 –––
td(off)
Turn-Off Delay Time
––– 55 –––
tf
Fall Time
––– 50 –––
Ciss
Input Capacitance
––– 5150 –––
Coss
Output Capacitance
––– 360 –––
Crss
Reverse Transfer Capacitance
––– 190 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 420 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 500 –––
S VDS = 50V, ID = 58A
nC ID = 58A
VDS = 80V
VGS = 10V g
ns VDD = 65V
ID = 58A
RG = 4.1Ω
VGS = 10V g
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V i, See Fig.11
VGS = 0V, VDS = 0V to 80V h, See Fig. 5
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) d
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 96c A MOSFET symbol
D
showing the
––– ––– 380 A integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 58A, VGS = 0V g
––– 38 56 ns TJ = 25°C
VR = 85V,
––– 51 77
TJ = 125°C
––– 61 92 nC TJ = 25°C
IF = 58A
di/dt = 100A/µs g
––– 110 170
TJ = 125°C
––– 2.8 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
as Coss while VDS is rising from 0 to 80% VDSS.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.14mH
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
footprint and soldering techniques refer to application note #AN-994.
above this value.
Rθ is measured at TJ approximately 90°C.
ISD ≤ 58A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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