IRFU9220(2013) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFU9220 Datasheet PDF : 11 Pages
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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 200
VGS = - 10 V
1.5
20
3.3
11
Single
S
DPAK
IPAK
(TO-252)
(TO-251)
G
D
D
GS
GD S
D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9220, SiHFR9220)
• Straight Lead (IRFUFU9220, SiHFU9220)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
SiHFR9220-GE3
IRFR9220PbF
SiHFR9220-E3
SiHFR9220TRL-GE3a
IRFR9220TRLPbFa
SiHFR9220TL-E3a
SiHFR9220TRR-GE3a
IRFR9220TRRPbFa
SiHFR9220TR-E3a
SiHFR9220TR-GE3a
IRFR9220TRPbFa
SiHFR9220T-E3a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VDS
VGS
VGS at - 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
- 200
± 20
- 3.6
- 2.3
- 14
0.33
0.020
310
- 3.6
4.2
42
2.5
- 5.0
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, Starting TJ = 25 °C, L = 35 mH, Rg = 25 , IAS = - 3.6 A (see fig. 12).
c. ISD - 3.9 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
- 55 to + 150
260
IPAK (TO-251)
SiHFU9220-GE3
IRFU9220PbF
SiHFU9220-E3
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0166-Rev. E, 04-Feb-13
1
Document Number: 91283
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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