IRFU9220PBF(2013) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFU9220PBF Datasheet PDF : 11 Pages
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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 2.2 Ab
VDS = - 50 V, ID = - 2.2 A
- 200
-
- 2.0
-
-
-
-
1.1
-
- 0.22
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
1.5
-
V
V/°C
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
-
VDS = - 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = - 10 V
ID = - 3.9 A, VDS = - 160 V,
see fig. 6 and 13b
-
-
-
VDD = - 100 V, ID = - 3.9 A,
-
Rg = 18 , RD = 24 , see fig. 10b
-
-
Between lead,
6 mm (0.25") from
D
-
package and center of
G
die contact
-
S
340
-
110
-
pF
33
-
-
20
-
3.3
nC
-
11
8.8
-
27
-
ns
7.3
-
19
-
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 3.6
A
-
-
- 14
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 3.6 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 3.9 A, dI/dt = 100 A/μsb
150
300
ns
Qrr
-
0.97 2.0
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S13-0166-Rev. E, 04-Feb-13
2
Document Number: 91283
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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