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HYB314100BJ-70 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Lista de partido
HYB314100BJ-70
Infineon
Infineon Technologies Infineon
HYB314100BJ-70 Datasheet PDF : 21 Pages
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HYB 514100BJ-50/-60
4M × 1 DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 °C
Storage temperature range.................................................................................... – 55 to + 150 °C
Input/output voltage ....................................................................................................... – 1 to + 7 V
Power Supply voltage .................................................................................................... – 1 to + 7 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 5 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Unit Test
Condition
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current, any input
II(L)
(0 V < VIN < 7, all other input = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 < VOUT < VCC)
Average VCC supply current
ICC1
-50 version
-60 version
2.4
– 1.0
2.4
– 10
– 10
VCC + 0.5 V 1
0.8
V
1
V
1
0.4
V
1
10
µA 1
10
µA 1
120
mA 2, 3
110
mA
Standby VCC supply current
(RAS = CAS = WE = VIH)
ICC2
Average VCC supply current during RAS-only ICC3
refresh cycles
-50 version
-60 version
2
mA
120
mA 2
110
mA
Average VCC supply current during fast page ICC4
mode operation
-50 version
-60 version
80
mA 2, 3
70
mA
Semiconductor Group
4
1998-10-01

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